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Low Temperature Synthesis of Si-C-N and C-N Films by IR-laser Assisted ECR-PECVD

Published online by Cambridge University Press:  10 February 2011

Shen Zhu  and
H. W. White
Shen Zhu
Affiliation:
USRA/SSL, Marshall Space Flight Center, Huntsville, AL 35812, shen.zhu@msfc.nasa.gov
H. W. White
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211
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Abstract

A new synthesizing method, IR-laser-assisted electron-cyclotron-resonance plasma-enhanced chemical vapor deposition (LA-ECR-PECVD), has been used to fabricate Si-C-N and C-N films on steel substrates at low temperatures (< 650 °C). Methane/nitrogen or carbon dioxide/nitrogen gases are dissociated to methane radicals and nitrogen plasma by the IR-laser and ECR to enhance the species' energy. An IR-laser beam (pulsed Nd:YAG laser, 1064 nm) was introduced into the growth chamber for two purposes: (1) to add Si atoms by ablating a Si target, and (2) to enhance the plasma concentration in the gas phase. An infrared vibration mode located at 1256 cm-l wavenumber was observed in Si-C-N and C-N films, although these films have an amorphous phase. The C-N film also has a Raman shift at 1276 cm-l. The AFM images reveal many islands with a size ranging from 50 nm – 150 nm in films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 365
Copyright
Copyright © Materials Research Society 1999

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