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Low Temperature Silicon Epitaxy Grown by Electron-Beam Evaporation in an Ultra-High Vacuum System

Published online by Cambridge University Press:  21 February 2011

Yung-Jen Lin  and
Tri-Rung Yew
Yung-Jen Lin
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
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Abstract

This paper presents the results of silicon epitaxial growth on silicon windows surrounded with oxide walls by electron-beam evaporation in an ultra-high vacuum system with a load-lock chamber. The wafer surface was in-situ cleaned in the growth chamber to remove native oxide by thermal desorption at about 840 °C and a base pressure of better than 2 × 10-9 Torr. The growth temperature was 200°C or higher. The pre-epitaxial silicon surface structure was inspected by reflection high energy electron diffraction (RHEED). The influence of the thermal desorption on the quality of the epi/substrate interface and epitaxial layers was studied. In addtion, the deposition parameters which control the epitaxial quality were investigated. The epitaxial films were characterized by cross-sectional trasmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 555
Copyright
Copyright © Materials Research Society 1992

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References

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