Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-20T08:19:46.488Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

Published online by Cambridge University Press:  15 February 2011

G. T. Sarcona  and
M. K. Hatalis
G. T. Sarcona
Affiliation:
Display Research Laboratory, EECS Department, Lehigh University, Bethlehem, PA 18015
M. K. Hatalis
Affiliation:
Display Research Laboratory, EECS Department, Lehigh University, Bethlehem, PA 18015
Get access

Abstract

Thin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 191
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Molarius, J.M., Franssila, S., Drozdy, G., Saarilahti, J., “Tungsten Silicide Formation from Sequentially Sputtered Tungsten and Silicon Films,” Appl. Surf. Sci. 53, 383, (1991).Google Scholar
2. Morgan, A.E., Broadbent, E.K., Delfino, M., Coulman, B., Sadana, D.K., “Characterization of a Self-Aligned Cobalt Silicide Process,” J. Electrochem. Soc. 134, 925, (1987).Google Scholar
3. Morimoto, T., Ohguro, T., Momose, H.S., linuma, T., Kunishima, I., Suguro, K., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., Iwai, H., “Self-Aligned Nickel-Mono- Silicide Technology for High-Speed Deep Submicrometer Logic CMOS ULSI,” IEEE Trans. Electron Dev. 42, 915, (1995).Google Scholar
4. Dori, L., Megdanis, A., Brodsky, S.B., Arienzo, M., Cohen, S.A., “Sputtered Tungsten for Deep-Submicron Complementary Metal Oxide Semiconductor Technology,” Thin Solid Films 193/194, 501, (1990).Google Scholar