Skip to main content Accessibility help
×
Home

Low Temperature Reordering of Implanted Amorphous Si with Al Surface Layers

  • L. S. Hung (a1), S. H. Chen (a1) and J. W. Mayer (a1)

Abstract

Ion backscattering and channeling techniques, transmission and scanning electron microscopy, and secondary ion mass spectroscopy were used to investigate the reordering characteristics of implanted amorphous Si in the presence of an Al surface layer. It was found that reordering takes place at the temperature of about 400°C and is associated with an interfacial migration between Al and Si. The regrowth behavior appears to be a function of the initial annealing temperature and annealing sequence. High density of twin faults and substantial concentration of Al are observed in the regrown layers. We believe that the low temperature reordering is due to processes analogous to solid epitaxial growth with transport media.

Copyright

References

Hide All
1. Lee, D. H., Hart, R. R., and Marsh, O. J., Appl. Phys. Lett., 20, 73 (1972).
2. Hung, L. S., Chen, S. H., and Mayer, J. W., in Thin Films and Interfaces II, eds. Baglin, J.E.E., Campbell, D. R., and Chu, W. K. (Elsevier, NY, 1984), p. 253.
3. Csepregi, L., Kennedy, E. F., Gallagher, T. J., Mayer, J. W., and Sigmon, T. W., J. Appl. Phys., 48, 4234 (1977).
4. Lau, S. S. and Van der Weg, W. F., in Thin Films–Interdiffusion and Reactions, eds. Poate, J. M., Tu, K. N., and Mayer, J. W. (John Wiley, NY, 1978), Chap. 12.
5. Lau, S. S., Mayer, J. W., and Tseng, W., in Handbook on Semiconductors, Vol.3, Materials Properties and Preparation, ed. Keller, S. P. (North Holland Amsterdam, 1980), Chap. 8.
6. Kennedy, E. F., Csepregi, L., Mayer, J. W., and Sigmon, T. W., J. Appl. Phys., 48, 4241 (1977).
7. Suni, I., Goltz, G., Grimaldi, M. G., Nicolet, M-A. and Lau, S. S., Appl. Phys. Lett., 40 (1982).
8. Ottaviani, G. and Majni, G., J. Appl. Phys., 50, 6865 (1979).
9. Majni, G., Ottaviani, G., and Stuck, R., Thin Solid Films, 55, 235 (1978).10.1016/0040-6090(78)90054-8

Low Temperature Reordering of Implanted Amorphous Si with Al Surface Layers

  • L. S. Hung (a1), S. H. Chen (a1) and J. W. Mayer (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed