Ion backscattering and channeling techniques, transmission and scanning electron microscopy, and secondary ion mass spectroscopy were used to investigate the reordering characteristics of implanted amorphous Si in the presence of an Al surface layer. It was found that reordering takes place at the temperature of about 400°C and is associated with an interfacial migration between Al and Si. The regrowth behavior appears to be a function of the initial annealing temperature and annealing sequence. High density of twin faults and substantial concentration of Al are observed in the regrown layers. We believe that the low temperature reordering is due to processes analogous to solid epitaxial growth with transport media.