Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-25T10:41:14.551Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Preparation of Sr2(Ta1-x, Nbx)2O7 Ferroelectric Thin Film by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

Minoru Noda ,
Toshiyuki Nakaiso ,
Hideki Sugiyama  and
Masanori Okuyama
Minoru Noda
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560–8531, Japan
Toshiyuki Nakaiso
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560–8531, Japan
Hideki Sugiyama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560–8531, Japan
Masanori Okuyama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560–8531, Japan
Get access

Abstract

Preferentially (151)-oriented Sr2(Ta1-x, Nbx)2O7 (STN) thin films on Pt have been prepared at temperatures as low as 550 and 600°C, in O2 and N2O atmospheres, respectively, by pulsed laser deposition (PLD). The temperatures are significantly lower than those prepared by sol-gel methods, where 950°C was reported. These are the lowest growth temperatures of crystalline STN thin films. Composition ratio (x) in the target material was determined to be around 0.3 from measurement of the Curie temperature and ferroelectric properties. Active oxygen generated by laser irradiation in ambient O2 or N2O atmosphere is found to be very effective for chemical reaction, and decreases the growth temperature of crystalline STN films. It is also confirmed by surface AFM and cross-sectional SEM observations that the film has a columnar-shaped structure with grain size ranging from 50 to 100 nm. Remanent polarization (Pr) and coercive field (Ec) are 0.4μ C/cm2 and 30 kV/cm, respectively. Finally, we expect the low temperature STN film prepared by PLD to be a promising ferroelectric for the application in ferroelectric memory FETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 185
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nanamatsu, S., Kimura, M. and Kawamura, T., J. Phys. Soc. Jpn. 38, p.819 (1975).Google Scholar
2. Fujimori, Y., Izumi, N., Nakamura, T. and Kamisawa, A., Jpn. J. Appl. Phys. 37, p.5207 (1998).Google Scholar
3. Akishige, Y. and Kubota, T., J. Phys. Soc. Jpn. 51, p. 3929 (1982).Google Scholar
4. Oishi, Y., Matsumuro, Y. and Okuyama, M., Jpn. J. Appl. Phys. 36, p.5896 (1997).Google Scholar
5. Ohi, K. and Kojima, S., Jpn. J. Appl. Phys. 24, p.817 (1985).Google Scholar