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Low Temperature Poly-Si on Flexible Polymer Substrates for Active Matrix Displays and Other Applications

Published online by Cambridge University Press:  15 February 2011

Nigel D. Young
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Michael J. Trainor
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Soo-Young Yoon
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
David J. McCulloch
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Richard W. Wilks
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Andrew Pearson
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Sandra Godfrey
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Peter W. Green
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Sander Roosendaal
Affiliation:
Philips Research Laboratories, Eindhoven, 5656AA, The Netherlands.
Elizabeth Hallworth
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
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Abstract

A variety of polymer materials including polyimide (PI), polyarylate (PAR), polynorbonene (PNB) and polyethersulphone (PES) have been studied for use as substrates in the formation of active matrix displays based upon polycrystalline silicon (poly-Si) thin film transistors (TFTs). A process used to fabricate transflective mobile phone displays at 250°C on such substrates is described in detail. The NMOS TFTs show a mobility of 100cm2/Vs, and a threshold voltage of 3.9V; the PMOS devices have a mobility of 52cm2/Vs, and a threshold voltage of -6V. Issues relating to performance of these devices, yield of the arrays, and manufacturability are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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