Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-20T22:59:00.086Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Oxidation of Silicon After Copper Ion Implantation

Published online by Cambridge University Press:  21 February 2011

E.J. Jaquez ,
T.L. Alford ,
N.D. Theodore ,
D. Adams ,
Jian Li ,
S.W. Russell  and
Simone Anders
E.J. Jaquez
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
T.L. Alford
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
N.D. Theodore
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
D. Adams
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
Jian Li
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
S.W. Russell
Affiliation:
Department of Chemical, Bio, And Materials Engineering, Arizona State University, Tempe, AZ 85287–6006
Simone Anders
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
Get access

Abstract

Silicon oxide films ( > 1μm ) were grown at room-temperature after low-energy copper-ion implantation of Si(100) substrates. The structural properties of the silicon oxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiOx interface. This study revealed that the oxide growth rate was dependent on the amount of Cu present at the moving interface. The resulting oxide formed was approximately stoichiometric silicon dioxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 189
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Li, Jian, and Shacham-Diamand, Y. and Mayer, J.W., Mat. Sci. Rep. 9, 1 (1992).Google Scholar
2 Harper, J.M.E., and Charai, A., and Stoltz, L., and d'Heurle, F. M. and Fryer, P.M., Appl. Phys. Lett. 56, 2519(1990).Google Scholar
3 Hewett, C. A. and Lau, S.S., Appi. Phys. Lett. 50, 827 (1987).Google Scholar
4 Follstaedt, D.M. and Myers, S.W., Mat. Res. Soc. Symp. Proc. 316, 27 (1994).Google Scholar
5 Anders, A., and Anders, S., and Brown, I. G., and Dickinson, M. R., and MacGill, R. A., J. Vac. Sci. Technol. B12, 815 (1994).Google Scholar
6 Chu, W.-K., and Mayer, J.W., and Nicolet, M.A., Backscattering Spectrometry. Acad. Press., NY, 1978.Google Scholar
7 Doolittle, L.R., Nucl. Instrum. and Methods B9, 344 (1985).Google Scholar
8 Alford, TL., and Jaquez, E. J., and David Theodore, N., and Russell, S.W., and Diale, M., and Adams, D., and Anders, Simone, J. Appl. Phys., in press.Google Scholar