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Low Temperature Infrared Measurements and Photo-Induced Persistent Changes of Intersubband Transitions in GaAs/AlGaAs Multiple Quantum Wells.

Published online by Cambridge University Press:  25 February 2011

B. Dischler ,
J.D. Ralston ,
P. Koidl ,
P. Hiesinger ,
M. Ramsteiner  and
M. Maier
B. Dischler
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, West Germany
J.D. Ralston
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, West Germany
P. Koidl
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, West Germany
P. Hiesinger
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, West Germany
M. Ramsteiner
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, West Germany
M. Maier
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, West Germany
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Abstract

Utilizing infrared absorption and Hall measurements, a detailed study is presented of the temperature dependence (10 K < T < 300 K) of the intersubband transition and related doping behaviour in GaAs/Al0.32Ga0.68As multiple quantum well structures with Si doping concentrations between 1×1018 and 8×1018 cm−3 in the quantum wells. The intersubband transition frequency increases with decreasing temperature, which can be adequately modelled by considering the different effective masses and the thermal populations of the two electron subbands. This model also accounts for the decrease in linewidth of the infrared absorption resonance upon cooling. In Hall measurements a persistent photo-induced decrease in the free electron concentration within the GaAs quantum wells is observed for Si doping levels exceeding 5×1018 cm−3. Corresponding decreases are observed both in the integrated absorption and the absolute frequency of the intersubband transition, the latter arising from a reduction in the depolarization shift. The spectral dependence of the photo-induced changes over the energy range 1.2 eV < hν < 2.5 eV, along with thermal regeneration over the temperature range 70 K < T < 150 K, have been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 347
Copyright
Copyright © Materials Research Society 1991

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References

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