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Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications

Published online by Cambridge University Press:  25 February 2011

P. Li ,
B. Gittleman  and
T.-M. Lu
P. Li
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
B. Gittleman
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
T.-M. Lu
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

High dielectric constant thin films for packaging applications were studied. Compared with polycrystalline or epitaxial ferroelectric thin films amorphous ferroelectric films are a promising alternative because of their ease of processing and low leakage current. Reactive Partially Ionized Beam deposition (RPIB) offers a new approach to deposit high dielectric constant films at a low substrate temperature. As an example, the growth of amorphous BaTiOs thin films using RPIB deposition is described. The films were characterized in terms of dielectric constant and leakage current. The annealing effects on the film properties are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 315
Copyright
Copyright © Materials Research Society 1991

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References

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