Skip to main content Accessibility help
×
Home

Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films From Two Different Targets via rf Magnetron Sputtering

  • A. C. Lourenço (a1), F. Figueiras (a2), S. Das (a3), J. S. Amaral (a4), G. N. Kakazei (a5), D. V. Karpinsky (a6), N. Soares (a7), M. Peres (a8), M. J. Pereira (a9), P. B. Tavares (a10), N. Sobolev (a11), V. Amaral (a12), N. M. Santos (a13) and Andrei L. Kholkin (a14)...

Abstract

Low temperature (400°C) deposition of ferromagnetic Ni-Mn-Ga thin films is successfully performed via rf magnetron sputtering technique using co-deposition of two targets Ni50Mn50 and Ni50Ga50 on sapphire (0001) and Si (100) substrates. The films are in part amorphous with significant degree of crystallinity. The obtained crystallographic structure is shown to be substrate-dependent. Films on both substrates are ferromagnetic at room temperature (Curie temperature ∼ 332.5K) with well-defined hysteresis loops, low coercivity (∼ 100 Oe) and a saturation magnetization of ∼ 200 emu/cc. At low temperature (5 K), both films show increased magnetization value with wider hysteresis loops having higher coercivity and remanent magnetization. The process is therefore effective in achieving the appropriate thermodynamic conditions to deposit thin films of the Ni-Mn-Ga austenitic phase (highly magnetic at room temperature) at relatively low substrate temperature without the need for post-deposition annealing or further thermal treatment, which is prerequisite for the device fabrication.

Copyright

References

Hide All
1 Thomas, M., Heczko, O., Buschbeck, J., Rossler, U. K., McCord, J., Scheerbaum, N., Schultz, L., and Fahler, S., New J. Phys. 10, 023040 (2008).
2 Hakola, A., Heczko, O., Jaakkola, A., Kajava, T. and Ullakko, K., Appl. Phys. A 79 1505 (2004)10.1007/s00339-004-2831-7
3 Golub, V. O., Vovk, A. Y., Malkinski, L., O'Connor, C. J., Wang, Z., and Tang, J., J. Appl. Phys. 96 3865 (2004)10.1063/1.1771474
4 Dong, J. W., Chen, L. C., Xie, J. Q., Muller, T. A. R, Carr, D. M., Palmstrom, C. J., McKernan, S., Pan, Q., and James, R. D., J. Appl. Phys. 88 7357 (2000)10.1063/1.1326461
5 Dubowik, J., Kudryavtsev, Y.V. and Lee, Y.P., J. Magn. Magn. Mater. 272 1178 (2004)10.1016/j.jmmm.2003.12.1093
6 Heczko, O., Thomas, M., Buschbeck, J., Schultz, L. and Fahler, S., Appl. Phys. Lett. 92 072502 (2008)10.1063/1.2883961
7 Chernenko, V.A., Ohtsuka, M., Kohl, M., Khovailo, V.V. and Takagi, T., Smart Mater. Struct. 14 S245 (2005)
8 Olson, R.R., Kingand, M.E. and Wehner, G.K., J. Appl. Phys. 50 3677 (1979)
9US Patent no. US 6454913 B1 (Sept 24, 2002)
10 Sozinov, A., Likhachev, A. A., and Ullakko, K., IEEE Trans. Magn. 38 2814 (2002)10.1109/TMAG.2002.803567

Keywords

Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films From Two Different Targets via rf Magnetron Sputtering

  • A. C. Lourenço (a1), F. Figueiras (a2), S. Das (a3), J. S. Amaral (a4), G. N. Kakazei (a5), D. V. Karpinsky (a6), N. Soares (a7), M. Peres (a8), M. J. Pereira (a9), P. B. Tavares (a10), N. Sobolev (a11), V. Amaral (a12), N. M. Santos (a13) and Andrei L. Kholkin (a14)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed