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Low Temperature Deposition of Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films on Pt Electrodes by RF Magnetron Sputtering

Published online by Cambridge University Press:  01 February 2011

N. Cramer ,
Elliot Philofsky ,
Lee Kammerdiner  and
T. S. Kalkur
N. Cramer
Affiliation:
Applied Ceramics Research, Colorado Springs, Colorado, 80919
Elliot Philofsky
Affiliation:
Applied Ceramics Research, Colorado Springs, Colorado, 80919
Lee Kammerdiner
Affiliation:
Applied Ceramics Research, Colorado Springs, Colorado, 80919
T. S. Kalkur
Affiliation:
Department of Electrical and Computer Engineering, University of Colorado at Colorado, Springs, Colorado Springs, Colorado, 80933
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Abstract

Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) films acceptor-doped with 0.8 at. % Sc were deposited on Pt/TiO2/SiO2/Si substrates using rf magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450°C, which allows this process to be compatible with many materials commonly used in IC manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 0.006 to 0.17 at 10 kHz. The tunability of the dielectric constant was greater than 50 %. Leakage current densities of 1.6×10-8 A/cm2 were observed at 300K with 300 kV/cm of applied electric field. In comparison, Ba1-xSrxTiO3 (BST) films prepared under similar conditions show much greater leakage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C8.15
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Dietz, G.W., Schumacher, M., Waser, R., Streiffer, S.K., Basceri, C., and Kingon, A.I., J. Appl. Phys. 82, 2359 (1997).Google Scholar
2. Tsai, M.S., Sun, S.C., and Tseng, T.Y., J. Appl. Phys. 82, 3482 (1997).Google Scholar
3. Chang, W. and Sengupta, L., J. Appl. Phys. 92, 3941 (2002).Google Scholar
4. Ren, T.L., Wang, X.N., Liu, J.W., Zhao, H.J., Shao, T.Q., Liu, L.T., and Li, Z.J., Integrated Ferroelectrics 45, 13 (2002).Google Scholar
5. Lee, Y.C., Lee, W.S., and Shieu, F.S., J. Mater. Sci. 37, 2699 (2002).Google Scholar
6. Liedtke, R., Grossmann, M., and Waser, R., Appl. Phys. Lett. 77, 2045 (2000).Google Scholar
7. Yi, Woo-Chul, Kalkur, T.S., Philofsky, E., Kammerdiner, L., and Rywak, A.A., Appl. Phys. Lett. 78, 3517 (2001).Google Scholar
8. Toyoda, M. and Lubis, M.Y.S., J. Sol-Gel Sci. Technol. 16, 7 (1999).Google Scholar
9. Hansen, P., Hennings, D., and Schreinemacher, H., J. Electroceramics 2, 85 (1998).Google Scholar
10. Shin, J.C., Park, J., Hwang, C.S., and Kim, H.J., J. Appl. Phys. 86, 506 (1999).Google Scholar
11. Chang, S.T. and Lee, J.Y., Appl. Phys. Lett. 80, 655 (2002).Google Scholar
12. Hwang, C.S., Lee, B.T., Kang, C.S., Lee, K.H., Cho, H.J., Hideki, H., Kim, W.D., Lee, S.I., and Lee, M.Y., J. Appl. Phys. 85, 287 (1999).Google Scholar