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Low Temperature (850 °C) Two-Step N2O Annealed Thin Gate Oxides

  • Chao Sung Lai (a1), Chung Len Lee (a1), Tan Fu Lei (a1), Tien Sheng Chao (a2), Chun Hung Peng (a3) and Han Ching Wang (a3)...

Abstract

The electrical characteristics of thin gate dielectrics prepared by low temperature (850 °C) two-step N20 nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then annealed in N2O at 850 °C. The oxide with N2O anneal, even for low temperature (850 °C), had nitrogen incorporation at oxide/silicon interface. The charge trapping phenomena and interface-state generation (ΔDitm) induced by constant current stressing were reduced and charge-to-breakdown (Qbd) under constant current stressing was increased. This LTN oxynitride was used as gate dielectric for N-channel MOSFET, whose hot-canrier immunity was shown improved and reverse short channel effect (RSCE) was suppressed.

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Low Temperature (850 °C) Two-Step N2O Annealed Thin Gate Oxides

  • Chao Sung Lai (a1), Chung Len Lee (a1), Tan Fu Lei (a1), Tien Sheng Chao (a2), Chun Hung Peng (a3) and Han Ching Wang (a3)...

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