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Low Resistivity-Highly Transparent Zno:Ga Tco's Grown by Laser Ablation

Published online by Cambridge University Press:  15 February 2011

J. M. Siqueiros ,
J.A. Díaz ,
O. Contreras ,
G.A. Hirata  and
J. McKittrick
J. M. Siqueiros
Affiliation:
Instituto de Física-UNAM, Apdo. Postal 2681, Ensenada, B.C., C.P. 22860, México.
J.A. Díaz
Affiliation:
Instituto de Física-UNAM, Apdo. Postal 2681, Ensenada, B.C., C.P. 22860, México.
O. Contreras
Affiliation:
Instituto de Física-UNAM, Apdo. Postal 2681, Ensenada, B.C., C.P. 22860, México.
G.A. Hirata
Affiliation:
Dept. of Applied Mechanics and Engineering Sciences and Materials Science Program, University of California, San Diego, La Jolla, CA, 92093-0411
J. McKittrick
Affiliation:
Dept. of Applied Mechanics and Engineering Sciences and Materials Science Program, University of California, San Diego, La Jolla, CA, 92093-0411
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Abstract

Highly transparent with low electrical resistivity gallium-doped zinc oxide (ZnO:Ga) thin films were prepared on glass by Pulsed Laser Deposition at different substrate temperatures. ZnO:Ga evaporation targets were prepared by pressing and sintering powder materials obtained with a novel combustion synthesis technique.

An excellent transmittance of more than 85% in the visible range and a low sheet resistance value as low as 13 Ω/sq. were measured on a 200 nm thickness film grown at Ts=300°C. From optical measurements we observed an increase in the ZnO:Ga bandgap when the substrate temperature is raised from 150°C to 300°C. With this, a remarkable improvement in the blue-green region transmittance is obtained.

X-Ray diffraction patterns indicate that the films grow highly oriented in the basal plane direction (c-axis) of the hexagonal ZnO grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 247
Copyright
Copyright © Materials Research Society 1996

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References

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