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A Low Frequency Remote Plasma Rapid Thermal CVD System with Face Down Electrostatic Clamp Wafer Holder

Published online by Cambridge University Press:  21 February 2011

Marlio J. C. Bonfim ,
Jacobus W. Swart ,
Cristian E. M. Velasco ,
Juscelino H. Okura  and
Patrick B. Verdonck
Marlio J. C. Bonfim
Affiliation:
DSIF/FEE and LPD/IFGWIUNICAMP, P.O.Box 6101, 13081-970 Campinas, S
Jacobus W. Swart
Affiliation:
DSIF/FEE and LPD/IFGWIUNICAMP, P.O.Box 6101, 13081-970 Campinas, S
Cristian E. M. Velasco
Affiliation:
DSIF/FEE and LPD/IFGWIUNICAMP, P.O.Box 6101, 13081-970 Campinas, S
Juscelino H. Okura
Affiliation:
IBM Technology Center, P.O.Box 71, Campinas, S.
Patrick B. Verdonck
Affiliation:
LSIIEPUSP, Sao Paulo, S.P., Brazil
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Abstract

A multiprocess CVD system with the following main features is designed and constructed: the wafer holder is made of a Si wafer with diameter larger than the process wafers. This larger holder produces a better temperature uniformity on the process wafer. A good thermal contact between holder and process wafer is obtained by an electrostatic clamp. The holder supports the process wafer facing down. A remote plasma is produced in a small chamber inside the process chamber. The 100 KHz RF frequency keeps the system very simple and cheap while still reasonable ionization is achieved. SiO2 films were deposited using SiH4 and O2 with and without remote plasma of O2. At low temperatures and 1.5 Torr, process activation energies of about 0.9 and 0.3 eV were obtained respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 407
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Hauser, J.R., Masnari, N.A. and Littlejohn, M.A., Mat. Res. Soc. Symp. Proc, 146, p.15, (1989).Google Scholar
2. Saraswat, K.C., Moslehi, M.M., Grossman, D.D., Wood, S., Wright, P. and Booth, L., Mat. Res. Soc. Symp. Proc., 146, p.3 (1989).Google Scholar
3. S.V., , Fountain, G.G., Alley, R.G., Rudder, R.A. and Markunas, R.J., J. Vac. Sci. Technol., A9 (3), May/Jun (1991).Google Scholar
4. Ozturk, M.C., Sorrell, F.Y., Wortman, J.J., Johnson, F.S. and Grider, D.T., IEEE Trans. Semicond. Manuf., vol. 4, no. 2, (1991).Google Scholar
5. Hartsough, L.D., Solid State Technol., Jan. 1993, p. 87.Google Scholar