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Low Energy Ion Irradiation Effect on Electron Transport in Gaas/Algaas Heterostructures

  • J. Yanagisawa (a1), A. Nozawa (a1), Y. Yuba (a1), S. Takaoka (a2), K. Murase (a2) (a3) and K. Gamo (a1) (a3)...

Abstract

Effects of low energy ion beam induced damages on transport properties of a two-dimensional electron gas (2DEG) system in GaAs/AlGaAs heterostructures have been investigated. 1 keV Ar ions were irradiated on the sample surface at several ion doses (1011 - 1013 cm-2). Carrier density and electron mobility of the 2DEG formed at about 90 nm below the GaAs/AlGaAs heterostructure surface were estimated at 1.5 K by Hall resistance and longitudinal resistance measurements before and after annealing at 400°C for 10 min in an Ar gas ambient. The temperature dependence of those values was also measured for as-grown and for 1013 cm-2 ion irradiated and subsequently annealed samples. Typical results show that carrier density and mobility are not degraded severely by Ar ion irradiation at doses of 1013 cm-2 and suggest the possibility to fabricate buried structures in GaAs/AlGaAs heterostructures using low energy Si focused ion beam (FIB) irradiation and subsequent in situ overlayer growth by MBE.

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Low Energy Ion Irradiation Effect on Electron Transport in Gaas/Algaas Heterostructures

  • J. Yanagisawa (a1), A. Nozawa (a1), Y. Yuba (a1), S. Takaoka (a2), K. Murase (a2) (a3) and K. Gamo (a1) (a3)...

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