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A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

  • R. P. Wright (a1) (a2), S. E. Kohn (a1) and N. M. Haegel (a3)

Abstract

A new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

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A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

  • R. P. Wright (a1) (a2), S. E. Kohn (a1) and N. M. Haegel (a3)

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