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Long-Wavelength Germanium Photodetectors by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

I.C. Wu ,
J.W. Beeman ,
P.N. Luke ,
W.L. Hansen  and
E.E. Haller
I.C. Wu
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720, USA
J.W. Beeman
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA
P.N. Luke
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA
W.L. Hansen
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA
E.E. Haller
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720, USA
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Abstract

Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended longwavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3K under an operating bias of up to 70mV. Optimum peak responsivity and noise equivalent power(NEP) for these sensitive detectors are 0.9A/W and 5×10−16 W/Hz1/2 at 99μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 473
Copyright
Copyright © Materials Research Society 1991

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References

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