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Long-Pulse Duration Excimer Laser Processing in the Fabrication of High Performance Polysilicon TFTs for Large Area Electronics

Published online by Cambridge University Press:  17 March 2011

E. Fogarassy ,
B. Prévot ,
S. de Unamuno ,
C. Prat ,
D. Zahorski ,
Y. Helen  and
T. Mohammed-Brahim
E. Fogarassy
Affiliation:
Laboratoire CNRS-PHASE, BP 20, 67037 Strasbourg, France
B. Prévot
Affiliation:
Laboratoire CNRS-PHASE, BP 20, 67037 Strasbourg, France
S. de Unamuno
Affiliation:
Laboratoire CNRS-PHASE, BP 20, 67037 Strasbourg, France
C. Prat
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
D. Zahorski
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
Y. Helen
Affiliation:
G.M.V. Université de Rennes I, 35042 Rennes, France
T. Mohammed-Brahim
Affiliation:
G.M.V. Université de Rennes I, 35042 Rennes, France
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Abstract

In this work, was investigated both numerically and experimentally, the excimer laser processing of a-Si films deposited on SiO2-coated glass substrates, using the very large area (∼ 20 cm2) and long pulse duration (200 ns) excimer source from SOPRA Company. Experiments were carried out in air or in neutral atmosphere, using both the single- and multi-shot mode. From the microstructural analysis of the laser irradiated area the formation of a large-grained material through the so-called SLG regime was evidenced. In addition, the application of a multi-shot process was demonstrated to be very efficient to prepare uniform polysilicon layers with enlarged grain sizes (up to 1.5 µm after 20 shots). Finally, poly-Si TFTs prepared in the optimized conditions (multi-shot, neutral ambience) exibited field effect mobilities up to 235 cm2/V.s (for N-type) and 84 cm2/V.s (for P-type), with fairly uniform device characteristics over large area and excellent stability under electrical stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D7.1.1
Copyright
Copyright © Materials Research Society 2001

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