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Long Range Hydrogen Motion, Evolution, and Bonding in a-Si:H and a-Ge:H

Published online by Cambridge University Press:  25 February 2011

R. Shinar ,
X.-L. Wu ,
S. Mitra  and
J. Shinar
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
X.-L. Wu
Affiliation:
Ames Laboratory - USDOE and Physics Department, Iowa State University, Ames, IA 50011
S. Mitra
Affiliation:
Ames Laboratory - USDOE and Physics Department, Iowa State University, Ames, IA 50011
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Physics Department, Iowa State University, Ames, IA 50011
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Abstract

The results of secondary ion mass spectrometry and IR studies of hydrogen diffusion in a-Si:H and a-Ge:H are reviewed and discussed. In a-Si:H, the diffusion is significantly slower at low total H content. The exponent α of the power-law time dependent diffusion constant D(t) = Doo(ωt)−α does not decrease with temperature as 1-T/To. D(tL), for constant diffusion length L, thus deviates from an Arrhenius behavior. The “apparent” activation energy Ea and prefactor Do derived from lnD(tL) vs 1/T yield a Meyer-Neldel relation Do = Aooexp(Ea/kToo) irrespective of L, H content, or microstructure. Aoo ≅ 3.3 × 10−14cm2/s and Too ≅ 730K for 2.5 × 10−5 ≤ Do ≤ 102cm2/s and 1.3 ≤ Ea ≤ 2.2eV. The preliminary results on a-Ge:H are similar, with Aoo ≅ 1.3 × 10−15cm2/s and Too = 530K. It is suspected that deviations from an exponential distribution of H site energies, structural relaxation, and deep H trapping sites related to microvoids may all contribute to the deviation of α from a 1-T/To behavior. Measurements following prolonged annealing suggest structural relaxation that affects H-site energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 677
Copyright
Copyright © Materials Research Society 1990

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