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Lognormal Lateral Distribution of Barrier Height in Au/n-GaAs Schottky Junctions?

Published online by Cambridge University Press:  25 February 2011

ZS. J. Horváth
ZS. J. Horváth*
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O. Box 76. H-1325, Hungary
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Abstract

Experimental capacitance-voltage (C-V) characteristics are presented for Au/n-GaAs Schottky contacts. The deviation of the obtained C-V characteristics from the theoretical one including the linear regions of the 1/Ca-V plot may be explained by either the normal or the lognormal lateral distribution of the barrier height. It is concluded that from physical point of view the lognormal lateral distribution of the Schottky barrier height proposed first in this work, is more likely than the normal distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 367
Copyright
Copyright © Materials Research Society 1992

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