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Localized Photoprocesses at Semiconductor-Electrolyte Interfaces Using a Programmable Laser Spot Scanner

Published online by Cambridge University Press:  21 February 2011

C. A. Kavassalis ,
D. H. Longendorfer ,
R. A. Lelievre  and
R. D. Rauh
C. A. Kavassalis
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
D. H. Longendorfer
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
R. A. Lelievre
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
R. D. Rauh
Affiliation:
Eic Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
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Abstract

A highly focused laser can be used to perform spatially selective photoelectrochemistry at semiconductor-electrolyte interfaces. These processes may be used for imaging (etching, deposition, etc.) or for nondestructive mapping of semiconductor properties from photoelectric response. A programmable laser scanner is described which can be used for both. An example of imaging is given for photoelectrochemical etching of pits in CdSe electrodes, which may be applied to archival data storage. Nondestructive evaluation is shown for a CdS crystal, in which the lateral distribution of subband gap photovoltage response is related to surface states incurred by polishing damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 151
Copyright
Copyright © Materials Research Society 1984

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References

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