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Localization of Hydrogen in B and in Doped Silicon by ion Channeling and PAC

Published online by Cambridge University Press:  26 February 2011

Th. Wichert ,
H. Skudlik ,
H. -D. Carstanjen ,
T. Enders ,
M. Deicher ,
G. Grübel ,
R. Keller ,
L. Song  and
M. Stutzmann
Th. Wichert
Affiliation:
Fakult¨at für Physik; Universität Konstanz, D 7750 Konstanz FRG
H. Skudlik
Affiliation:
Fakult¨at für Physik; Universität Konstanz, D 7750 Konstanz FRG
H. -D. Carstanjen
Affiliation:
Institut für Theoretische und Angewandte Physik; Universität Stuttgart, D 7000 Stuttgart 80, FRG
T. Enders
Affiliation:
Institut für Theoretische und Angewandte Physik; Universität Stuttgart, D 7000 Stuttgart 80, FRG
M. Deicher
Affiliation:
Fakult¨at für Physik; Universität Konstanz, D 7750 Konstanz FRG
G. Grübel
Affiliation:
Fakult¨at für Physik; Universität Konstanz, D 7750 Konstanz FRG
R. Keller
Affiliation:
Fakult¨at für Physik; Universität Konstanz, D 7750 Konstanz FRG
L. Song
Affiliation:
Fakult¨at für Physik; Universität Konstanz, D 7750 Konstanz FRG
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperphysik, D 7000 Stuttgart, FRG
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Abstract

The lattice site of H/D atoms in silicon doped with B and 111In atoms is investigated using the ion channeling and perturbed γγ angular correlation (PAC) technique. The results indicate that at 295 K the antibonding site is occupied by H/D and that this site is easily transformed into a near tetrahedral site under the influence of an analyzing ion beam. Based on PAC results, the population of a second site, possibly a bond-center site, is expected at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 265
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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