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Local Vibrational Mode Spectroscopy of Impurities in Semiconductors

Published online by Cambridge University Press:  28 February 2011

R. C. Newman
R. C. Newman*
Affiliation:
J. J. Thomson Physical Laboratory.University of Reading, Whiteknights. Reading RG6 2AF, UK
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Abstract

Infrared band—mode and LVM absorption is illustrated for a range of impurities and impurity—complexes in silicon and gallium arsenide. We discuss the effects of changes in the local force constants and contributions to the dipole moment resulting from displacements of host lattice atoms. The difficulties in establishing absolute calibrations relating the strength of the absorption to the concentration of defects are highlighted. Our purpose is to show how the measurements lead to characterization of crystals and how they complement other diagnostic techniques to evaluate effects of irradiation, heat treatments, diffusions etc.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 459
Copyright
Copyright © Materials Research Society 1985

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