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Local Texture and Electromigration in Fine Line Microelectronic Aluminum Metallization

Published online by Cambridge University Press:  15 February 2011

J. L. Hurd ,
K. P. Rodbell ,
D. B. Knorr  and
N. L. Koligman
J. L. Hurd
Affiliation:
IBM Analytical Services Group, 1580 Route 52, Hopewell Junction, NY 12542.
K. P. Rodbell
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598.
D. B. Knorr
Affiliation:
Materials Engineering Dept., Rensselaer Polytechnic Institute, Troy, NY 12180.
N. L. Koligman
Affiliation:
IBM Analytical Services Group, 1580 Route 52, Hopewell Junction, NY 12542.
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Abstract

Aluminum films 1 μm thick were deposited on oxidized silicon by sputtering and partially ionized beam evaporation to vary the crystallographic texture. These films were patterned into lines and subsequently annealed at 400 °C for 1 h. A strong correlation between the electromigration behavior and the blanket film texture (X-ray diffraction (XRD) / pole figures) has been reported previously for these films. In this work, an Electron Backscatter Diffraction (EBSD) a.k.a. Backscatter Kikuchi Diffraction (BKD) technique was employed using a scanning electron microscope (SEM) to interrogate individual grain orientations. BKD pole figures were acquired for lines ≥0.3 μm wide and for blanket (pad) regions. Identical, inverse pole figures were found for blanket films measured using both XRD and BKD (pads). Furthermore, the BKD (111) fiber texture shows a line width dependency, with narrow lines having a slightly improved texture over blanket (pad) regions. Local grain orientations were investigated near and within electromigration testing sites with characteristic void and hillock morphologies. The relationship of neighboring grain orientations to electromigration damage is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 653
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Troost, K.Z. and Slangen, M.H.J., “EBSP Studies in Microelectronics”, European Microscopy and Analysis, September 1993, p. 17.Google Scholar
2. Kordic, S., Wolters, R.A.M. and Troost, K.Z., J. Appl. Phys. 74, 5391 (1993).CrossRefGoogle Scholar
3. Knorr, D.B., Rodbell, K.P. and Tracy, D.P.. Proceedings of the First MRS Symposium on Materials Reliability Issues in Microelectronics. (MRS Publications, Pittsburgh, 1991), 225, p.21.Google Scholar
4. Knorr, D.B., Tracy, D.P., and Rodbell, K.P., Appl. Phys. Lett. 59, 3241 (1991).CrossRefGoogle Scholar
5. Venables, J.A., Harland, C.J., Phil. Mag. 27, 1193 (1973).Google Scholar
6. SINTEF Metallurgy, Trondheim, Norway.Google Scholar
7. CHANNEL Software, N. H. Schmidt, Randers, Denmark.Google Scholar
8. Starkey, J., Can. J. Earth Sci. 14, 268 (1977).Google Scholar
9. Bunge, H.J., Int. Mat. Rev. 32, 265 (1987).CrossRefGoogle Scholar