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Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots.

  • A. M. Mintairov (a1), P. A. Blagnov (a2), O. V. Kovalenkov (a2), C. Li (a3), J. L. Merz (a1), S. Oktyabrsky (a4), K. Sun (a1), V. Tokranov (a4), A. S. Vlasov (a2) and D. A. Vinokurov (a2)...

Abstract

Experimental and theoretical investigations of high-energy shifts of single InAs, InGaAs, InAlAs and InP quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip are reported. “Pressure” coefficients of 0.65–3.5 meV/nm have been measured for ground state emission lines in agreement with numerical calculations. We show that the observed increase of the tip-induced energy shift with increasing aperture diameter is caused by a decrease of the uniaxial strain component. We also report the effect of emission instability of single QD emission intensity under tip-induced pressure.

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Mintairov, A. M., Blagnov, P. A., Kovalenkov, O. V., Li, C., Merz, J. L., Oktyabrsky, S., Tokranov, V., Vlasov, A. S., Vinokurov, D. A., Mat. Res. Soc. Proc. 722, (2002).
Priester, C., Allan, G., and Lanno, M., Phys. Rev. B, 37, 85198522 (1988)
Pollak, F. H. and Cardona, M., Phys. Rev. 172, 816837 (1968).

Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots.

  • A. M. Mintairov (a1), P. A. Blagnov (a2), O. V. Kovalenkov (a2), C. Li (a3), J. L. Merz (a1), S. Oktyabrsky (a4), K. Sun (a1), V. Tokranov (a4), A. S. Vlasov (a2) and D. A. Vinokurov (a2)...

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