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Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation

Published online by Cambridge University Press:  22 February 2011

R. T. Tung ,
J. M. Gibson ,
D. C. Jacobson  and
J. M. Poate
J. M. Gibson
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Epitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 721
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Tung, R.T., Poate, J. M., Bean, J. C., Gibson, J. M., and Jacobson, D. C., Thin Solid Films, 93, 77 (1982).Google Scholar
2.Tung, R.T., Gibson, J. M. and Poate, J. M.Phys. Rev. Lett. 50, 429 (1983).Google Scholar
3.Tung, R.T., Gibson, J. M. and Poate, J. N.Appl. Phys. Lett. 42, 888 (1983).Google Scholar
4.Poate, J.M., Leamy, H. J., Sheng, T. T. and Celler, G. K., Appl. Phys. Lett. 33, 918 (1978).Google Scholar
5.Stacy, W.T., van Gurp, G. J., Eggermont, G. E. J., Tamminga, T. and Gijsbers, J. R. M., ECS Sym. Proc. 80–2, 442 (1980).Google Scholar
6.Chen, L.J., Hung, L. S., Mayer, J. W., Baglin, J. E. E., Neri, J. M., and Hammer, D. A., Appl. Phys. Lett., 40, 595 (1982).Google Scholar
7.Grimaldi, M.G., Baeri, P., Rimini, E., and Celotti, G., Appl. Phys. Lett. 43, 244 (1983)Google Scholar
8.Baeri, P. and Campisano, S. U. in “Laser Annealing of Semiconductors” edited by Poate, J. M. and Mayer, J. W. (Academic, New York, 1982) Chap. 4.Google Scholar
9.Tung, R.T., Gibson, J. M., Jacobson, D. C., and Poate, J. M., Appl. Phys. Lett. 43, 476 (1983).Google Scholar
10.Buene, L., Jacobson, D. C., Nakahara, S., Poate, J. M., Draper, C. W. and Hirvonen, J. K.MRS Sym. Proc., Vol. 1, 583 (1981).Google Scholar