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Liquid Phase Epitaxy of Si1−xGex(O<×≲1) On Partially Masked Si-Substrates

Published online by Cambridge University Press:  28 February 2011

H.-P. Trah ,
M.I. Alonso ,
M. Konuma ,
E. Bauser ,
H. Cerva  and
H.P. Strunk
H.-P. Trah
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG
M.I. Alonso
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG
M. Konuma
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG
H. Cerva
Affiliation:
Siemens AG, Forschungslaboratorium, D-8000 München 83, FRG
H.P. Strunk
Affiliation:
Siemens AG, Forschungslaboratorium, D-8000 München 83, FRG on leave from TU Hamburg-Harburg, D-2100 Hamburg 90, FRG
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Abstract

Single-crystal Si1−x Gex(O<×≲1) layers are grown by seeded growth on partially SiO2-masked Si-substrates, using a one-step liquid phase epitaxy (LPE) process. The seed regions are stripe- and hole-shaped windows in the oxide, having linear dimensions between 1.5 and 100 μm. The windows extend in different orientation on (111) and (100) orientated substrates. Lateral overgrowth over the oxide-masked areas is achieved up to 70 μm in <110>-directions. X-ray diffraction and Raman scattering show that the epitaxial islands are homogeneous and of excellent crystal quality. In the regions of lateral overgrowth the dislocation density is reduced considerably as shown by defect-etching and cross section transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 393
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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