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Liquid Injection MOCVD of Rare-Earth Oxides Using New Alkoxide Precursors

Published online by Cambridge University Press:  01 February 2011

Paul A. Williams ,
Anthony C. Jones ,
Helen C. Aspinall ,
Jeffrey M. Gaskell ,
Paul R. Chalker ,
Paul A. Marshall ,
Yim F. Loo  and
Lesley M. Smith
Paul A. Williams
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Anthony C. Jones
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK
Helen C. Aspinall
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK
Jeffrey M. Gaskell
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK
Paul R. Chalker
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Paul A. Marshall
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Yim F. Loo
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK
Lesley M. Smith
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
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Abstract

High purity lanthanum oxide and praseodymium oxide thin films (C< 1 at.-%) have been deposited by liquid injection MOCVD using the volatile alkoxide precursos [La(mmp)3] and [Pr(mmp)3] in toluene-solution (mmp = OCMe2CH2OMe). 1H NMR solution studies have shown that the addition of donor species, such as tetraglyme (CH3O(CH2CH2O)4CH3) or mmpH prevent molecular aggregation and help stabilise the precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E9.2/C9.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Wu, Y. H., Yang, M.Y., Chin, A., Chen, W. J. and Kwei, C. M., IEEE Electron. Devices Lett., 21, 341 (2000).Google Scholar
2. Osten, H. J., Liu, J. P., Gaworzewski, P., Bugiel, E. and Zaumseil, P., IEDM Tech. Dig., 653 (2000).Google Scholar
3. Jones, A.C., J. Mater. Chem., 12, 2576 (2002).Google Scholar
4. Weber, A. and Suhr, H., Mod. Phys. Lett., B3, 1001 (1989).Google Scholar
5. Cabanas, M.V., Ragel, C.V., Conde, F., Gonzalez-Cabet, J. M. and Vallet-Regi, M., Solid State Ionics, 101–103, 191 (1997).Google Scholar
6. Lo Nigro, R., Toro, R., Malandrino, G, Raineri, V. and Fragalà, I. L, Electrochem. Soc. Proc., 2003–08, 915 (2003).Google Scholar
7. Herrmann, W. A., Huber, N. W. and Runte, O., Angew. Chem. Int. Ed Engl. 34, 2187 (1995).Google Scholar
8. Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., Davies, H. O. and Leedham, T. J., Chem. Vap. Deposition, 8, 163 (2002) 9.Google Scholar
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A.C., Chalker, P. R., Marshall, P. A., Smith, L. M. and Critchlow, G. W., Chem. Vap. Deposition, 9, no. 5, 235 (2003).Google Scholar
10. Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., Smith, L. M. and Critchlow, G. W., Chem. Vap. Deposition, in press.Google Scholar
11. Jones, A. C., Leedham, T. J., Wright, P. J., Crosbie, M. J., Lane, P. A., Williams, D. J., Fleeting, K. A., Otway, D. J. and O'Brien, P., Chem. Vap. Deposition, 4, 46 (1998).Google Scholar
12. Daniele, S., Hubert-Pfalzgraf, L. G., Hitchcock, P. B. and Lappert, M. F., Inorg. Chem. Commun., 3, 218 (2000)Google Scholar