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Liquid injection MOCVD and ALD studies of “single source” Sr-Nb and Sr-Ta precursors

Published online by Cambridge University Press:  01 February 2011

Richard J. Potter
Affiliation:
Department of Material Science & Eng., University of Liverpool, Liverpool, L69 3BX, UK.
Paul A. Marshall
Affiliation:
Department of Material Science & Eng., University of Liverpool, Liverpool, L69 3BX, UK.
John L. Roberts
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK.
Anthony C. Jones
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK. Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK.
Paul R. Chalker
Affiliation:
Department of Material Science & Eng., University of Liverpool, Liverpool, L69 3BX, UK.
Marko Vehkamäki
Affiliation:
Department of Chemistry, University of Helsinki, FIN-00014, Helsinki, Finland.
Mikko Ritala
Affiliation:
Department of Chemistry, University of Helsinki, FIN-00014, Helsinki, Finland.
Markku Leskelä
Affiliation:
Department of Chemistry, University of Helsinki, FIN-00014, Helsinki, Finland.
Paul A. Williams
Affiliation:
Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK.
Hywel O. Davies
Affiliation:
Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK.
Neil L. Tobin
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK.
Lesley M. Smith
Affiliation:
Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK.
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Abstract

A range of “single source” Sr-Nb and Sr-Ta heterometal alkoxides precursors are investigated as potential sources for liquid injection MOCVD (metalorganic chemical vapour deposition) and ALD (atomic layer deposition) of SrBi2Ta2O9 (SBT) and SrBi2(TxNb1-x)2O9 (SBTN). These “single source” precursors are designed to alleviate the mis-match between conventional Sr and Ta or Sr and Nb sources. Strontium-tantalate and strontium-niobate thin films were deposited on silicon using the “single source” alkoxide precursors [Sr{Ta(OEt)5(dmae}2] and [Sr{Nb(OEt)5(dmae)}2] (dmae = OCH2CH2NMe2), and the optimum temperatures for deposition of stoichiometric SrTa2O6 and SrNb2O6 were determined. Separate ALD studies of [Sr{Ta(OEt)5(dmae)}2] and [Sr{Ta(OEt)5(mee)}2] (mee = OCH2CH2OMe) for the growth of strontium-tantalate were carried out to assess precursor suitability for this technique. Liquid injection MOCVD of Bi-oxide films using Bi(mmp)3 indicates similar decomposition behaviour to the Sr-Ta and Sr-Nb alkoxides, demonstrating its suitability as a complementary source of Bi for SBT, SBN and SBTN.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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