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Liquid injection MOCVD and ALD studies of “single source” Sr-Nb and Sr-Ta precursors

  • Richard J. Potter (a1), Paul A. Marshall (a1), John L. Roberts (a2), Anthony C. Jones (a2) (a3), Paul R. Chalker (a1), Marko Vehkamäki (a4), Mikko Ritala (a4), Markku Leskelä (a4), Paul A. Williams (a3), Hywel O. Davies (a3), Neil L. Tobin (a2) and Lesley M. Smith (a3)...

Abstract

A range of “single source” Sr-Nb and Sr-Ta heterometal alkoxides precursors are investigated as potential sources for liquid injection MOCVD (metalorganic chemical vapour deposition) and ALD (atomic layer deposition) of SrBi2Ta2O9 (SBT) and SrBi2(TxNb1-x)2O9 (SBTN). These “single source” precursors are designed to alleviate the mis-match between conventional Sr and Ta or Sr and Nb sources. Strontium-tantalate and strontium-niobate thin films were deposited on silicon using the “single source” alkoxide precursors [Sr{Ta(OEt)5(dmae}2] and [Sr{Nb(OEt)5(dmae)}2] (dmae = OCH2CH2NMe2), and the optimum temperatures for deposition of stoichiometric SrTa2O6 and SrNb2O6 were determined. Separate ALD studies of [Sr{Ta(OEt)5(dmae)}2] and [Sr{Ta(OEt)5(mee)}2] (mee = OCH2CH2OMe) for the growth of strontium-tantalate were carried out to assess precursor suitability for this technique. Liquid injection MOCVD of Bi-oxide films using Bi(mmp)3 indicates similar decomposition behaviour to the Sr-Ta and Sr-Nb alkoxides, demonstrating its suitability as a complementary source of Bi for SBT, SBN and SBTN.

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Liquid injection MOCVD and ALD studies of “single source” Sr-Nb and Sr-Ta precursors

  • Richard J. Potter (a1), Paul A. Marshall (a1), John L. Roberts (a2), Anthony C. Jones (a2) (a3), Paul R. Chalker (a1), Marko Vehkamäki (a4), Mikko Ritala (a4), Markku Leskelä (a4), Paul A. Williams (a3), Hywel O. Davies (a3), Neil L. Tobin (a2) and Lesley M. Smith (a3)...

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