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Line-Width Dependence of Void Formation in Ti-Salicided BF2-Doped Polysilicon Lines

Published online by Cambridge University Press:  10 February 2011

H. N. Chua ,
K. L. Pey ,
S. Y. Siah ,
E. H. Lim  and
C. S. Ho
H. N. Chua
Affiliation:
Centre for Integrated Circuit Failure Analysis & Reliability, Department of Electrical Engineering, National University of singapore
K. L. Pey
Affiliation:
Centre for Integrated Circuit Failure Analysis & Reliability, Department of Electrical Engineering, National University of singapore
S. Y. Siah
Affiliation:
R&D Department, chartered semiconductor Manufacturing Ltd
E. H. Lim
Affiliation:
R&D Department, chartered semiconductor Manufacturing Ltd
C. S. Ho
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
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Abstract

We report the first observation of voids in sub-quarter micron Ti-salicided BF2-dopedpolycrystalline silicon (polySi) lines. Some of the voids, with sizes ranging from 10 to 100nm, can be clearly seen on the surface of the TiSi2 film whereas others are situated below the TiSi2 surface. The void density and size increase with decreasing polySi line-width, especially for line-widths < 0.24 µm. The voiding phenomenon was also observed to be moresevere for TiSi2 fabricated with enhanced salicidation techniques such as pre-amorphization-implant(PAl) and implant-through-metal (ITM) as compared to the conventional salicidationmethod without amorphization. The origin of the voids is found to coincide with the fluorinepeak at the TiSi2/polySi interface in the SIMS depth-concentration profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 91
Copyright
Copyright © Materials Research Society 1999

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