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Line-Width Dependence of Stress in Passivated Al Lines During Thermal Cycling

Published online by Cambridge University Press:  22 February 2011

D. Chidambarrao ,
K. P. Rodbell ,
M. D. Thouless  and
P. W. DeHaven
D. Chidambarrao
Affiliation:
IBM Semiconductor R & D Center, Z/AEI, Hopewell Jct., NY 12533
K. P. Rodbell
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598
M. D. Thouless
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598
P. W. DeHaven
Affiliation:
IBM East Fishkill Facility, Hopewell Jct., NY 12533
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Abstract

We have obtained theoretical stress-temperature curves for passivated Al lines undergoing thermal cycling. A finite element plane-strain cross-sectional analysis with a time-dependent constitutive property for Al, based on equations for discreteobstacle controlled plasticity, was performed. The parameters for this Al constitutive relation were obtained by fitting with experimentally obtained stress-temperature curves for Al blanket films on silicon. Theoretical results agree well with the x-ray diffraction experimental data of Besser et al.1 Using a time-dependent property for Al helps match the data better than a time-independent property. Theoretical stress-temperature curves were also obtained for the longitudinal, transverse, and normal stress components in aluminum lines for line-widths ranging from 0.5 to 10 µm. The hysteresis of the stress-temperature curve of Al gets less as the line-width gets smaller. All stress components in the Al line change substantially with linewidth for the same oxide thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 261
Copyright
Copyright © Materials Research Society 1994

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References

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