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Line width Dependence of Stress Relaxation and Yield Behavior of Passivated Al(Cu) Lines

Published online by Cambridge University Press:  22 February 2011

I.-S. Yeo ,
S.G.H. Anderson ,
C.-N. Liao ,
D. Jawarani ,
H. Kawasaki  and
P.S. Ho
I.-S. Yeo
Affiliation:
Center for Materials Science, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
S.G.H. Anderson
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Austin, TX
C.-N. Liao
Affiliation:
Center for Materials Science, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
D. Jawarani
Affiliation:
Center for Materials Science, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
H. Kawasaki
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Austin, TX
P.S. Ho
Affiliation:
Center for Materials Science, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
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Abstract

Stress relaxation behavior of thermally induced stresses in passivated line structures is strongly influenced by the metal yield strength. For some line geometries, stress relaxation can lead to void formation. In this study, bending beam measurements have been carried out to measure the thermal stress and stress relaxation behavior of passivated Al(l wt.% Cu) line structures with 3, 1, and 0.5 µm line widths. Our results reveal that stress relaxation in Al(Cu) films and lines shows log(time) kinetics consistent with a thermally activated dislocation glide mechanism. The kinetics of stress relaxation depend on line geometry and temperature, which can be explained by a combined effect of temperature (mass transport) and shear stress (driving force).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 281
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Klema, J., Pyle, R., and Domagogue, E., IEEE Proc. Int. Rel. Phys. Symp., 22, 1 (1984).Google Scholar
2. Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A., IEEE Proc. Int. Rel. Phys. Symp., 22, 6 (1984).Google Scholar
3. Okabayshi, H., Mater. Sci. & Eng. R11 (5), 191–241 (1993), and references contained therein.Google Scholar
4. Anderson, S.G.H., Yeo, I.-S., Ho, P.S., Ramaswami, S., and Cheung, R. in Materials Reliability in Microelectronics III, edited by Rodbell, K.P., Filter, W.F., Frost, H. J., and Ho, P.S. (Mater. Res. Soc. Proc. 309, Pittsburgh, PA, 1993) pp. 261–268.Google Scholar
5. Yeo, I.-S., MS thesis, University of Texas at Austin, 1993.Google Scholar
6. Anderson, S.G.H., Yeo, I.-S., Ho, P.S., Clark, A.P., and Saimoto, S., presented at the 1994 MRS Spring Meeting, Materials Reliability in Microelectronics. (1994).Google Scholar
7. Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. Elect. Dev. 34, 689 (1987).Google Scholar
8. Korhonen, M.A., Paszkiet, C.A., Black, R.D., and Li, Che-Yu, Scrip. Met. Mater., 24 (12), 2297–2302 (1990).Google Scholar
9. Schroeder, H., Burges, U., and Schilling, W., presented at the 2nd Workshop on Stress-Induced Phenomena in Metallization, Austin, TX, 1993.Google Scholar
10. Frost, H.J. in Materials Reliability in Microelectronics II, edited by Thompson, C.V. and Lloyd, J.R. (Mater. Res. Soc. Proc. 265, Pittsburgh, PA, 1992) pp. 3–14.Google Scholar
11. Dieter, G.E., Mechanical Metallurgy, Metric, SI Ed. (McGraw-Hill Book Company, London, 1988), p. 76.Google Scholar
12. Clark, A.P., Saimoto, S., and Ho, P.S., presented at the 2nd Workshop on Stress-Induced Phenomena in Metallization, Austin, TX, 1993.Google Scholar