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Limitations to the Bandgap-Selective Photoelectrochemical Etching of GaAs/AlxGa1−x as Heterostructures

  • Reena Khare (a1), D. Bruce Young (a1) and Evelyn L. Hu (a1)

Abstract

We have used the wet photoelectrochemical (PEC) etch process to demonstrate the selective removal of low aluminum (Al) mole-fraction AlxGa1−xAs layers from those with higher Al mole-fraction. High etch selectivity was found for δx as low as 0.05, but was found to decrease as the incident photon energy approached the energy bandgap of the desired stop-layer. The ultimate selectivity of one layer from an underlying layer was affected not only by differences in material composition, but also by the sequencing of the layers within the structure.

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Limitations to the Bandgap-Selective Photoelectrochemical Etching of GaAs/AlxGa1−x as Heterostructures

  • Reena Khare (a1), D. Bruce Young (a1) and Evelyn L. Hu (a1)

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