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Light-Soaking of a-Si:H,F Films Deposited from SiF4 and H2

  • H. R. Park (a1), J. Z. Liu (a1), A. Maruyama (a1) and S. Wagner (a1)

Abstract

We light-soaked two a-Si:H, F films up to 1,300 hours at a generation rate of 5×1020 cm−3s− 1. The films differ in fluorine content (1 vs. 5 at.%) and in hydrogen content (8 vs. 15 at.%). At each step, we measured the subgap absorption with the constant photocurrent method, the dark- and the photoconductivity. The magnitude and rate of light-induced defect production is similar to that of a-Si:H films.

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