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Light-Emitting and Structural Properties of Si-rich HfO2 Thin Films Fabricated by RF Magnetron Sputtering

Published online by Cambridge University Press:  19 November 2013

D. Khomenkov ,
Y.-T. An ,
X. Portier ,
C. Labbe ,
F. Gourbilleau  and
L. Khomenkova
D. Khomenkov
Affiliation:
Taras Shevchenko National University of Kyiv, Faculty of Physics, 4 Pr. Hlushkov, Kyiv 03022, Ukraine
Y.-T. An
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
X. Portier
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
C. Labbe
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
F. Gourbilleau
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
L. Khomenkova
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, 41 Pr. Nauky, Kyiv 03028, Ukraine
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Abstract

Structural, optical and luminescent properties of Si-rich HfO2 films fabricated by RF magnetron sputtering were investigated versus annealing treatment. Pronounced phase separation process occurred at 950-1100°C and resulted in the formation of hafnia and silica phases, as well as pure silicon clusters. An intense light emission of annealed samples in visible spectral range was obtained under broad band excitation. It was ascribed to exciton recombination inside silicon clusters as well as host defects. To confirm the formation of Si clusters, the structures were co-doped with Er3+ ions and effective light emission at 1.54µm was obtained under non-resonant excitation due to energy transfer from Si clusters towards Er3+ ions. The interaction of Si clusters, host defects and Er3+ ions under is discussed.

Keywords

On-Chip Interconnectselectrical propertiesfrequency-dependence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 85 - 91
Copyright
Copyright © Materials Research Society 2013 

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