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Light Scattering from Pulsed Laser Deposited BaBi4Ti4O15 Thin Films

Published online by Cambridge University Press:  10 February 2011

R.K. Soni ,
Anju Dixit ,
R. S. Katiyar ,
A. Pignolet ,
K.M. Satyalakshmi  and
D. Hesse
R.K. Soni
Affiliation:
Physics Department, University of Puerto Rico, San Juan, Puerto Rico, PR 00931, USA
Anju Dixit
Affiliation:
Physics Department, University of Puerto Rico, San Juan, Puerto Rico, PR 00931, USA
R. S. Katiyar
Affiliation:
Physics Department, University of Puerto Rico, San Juan, Puerto Rico, PR 00931, USA
A. Pignolet
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
K.M. Satyalakshmi
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
D. Hesse
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
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Abstract

Light scattering investigations are carried out on BaBi4Ti4O15 (BBiT) which is a member of the Bi-layer structure ferroelectric oxide with n = 4. The BBiT thin films, thickness ∼ 300 nm, were grown on epitaxial conducting LaNiO3 electrodes on epitaxial buffer layers on (100) silicon by pulsed laser deposition. Micro-Raman measurements performed on these films reveal a sharp low-frequency mode at 51 cm−1 along with broad highfrequeficy modes corresponding to other lattice vibrations including TiO6 octahedra. No temperature dependence of the low frequency mode is seen while a weak dependence of the broad high frequency vibrations are observed in the mixed oriented regions. Raman polarization carried out at room temperature indicates that the prominent modes have Alg and Eg symmetries in the BaBi4Ti4O15 thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 167
Copyright
Copyright © Materials Research Society 2000

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