Skip to main content Accessibility help
×
Home

Light Emitting Micropatterns of Porous Semiconductors

  • D. J. Lockwood (a1), P. Schmuki (a2) and L. E. Erickson (a1)

Abstract

We report a principle that allows writing visible light emitting semiconductor patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous semiconductor growth can be electrochemically initiated preferentially at surface defects created in an n-type substrate by Si++ focused ion beam bombardment. For n-type material in the dark, the electrochemical pore formation potential (Schottky barrier breakdown voltage) is significantly lower at the implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve the selectivity of the pore formation process. Visible light emitting patterns of porous Si and GaAs have been created in this way. At present, the size of the structures is limited only by the diameter of the writing ion beam, and pattern diameters in the 50–200-nm range are possible.

Copyright

References

Hide All
1. Lockwood, D. J., Ed., Light Emission in Silicon (Academic Press, Boston, 1997).
2. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).
3. See, for example, Cullis, A. G., Canham, L. T., Calcott, P. D. J., J. Appl. Phys. 82, 909 (1997).
4. Hirschmann, K. D., Tsybeskov, L., Duttagupta, S. P., Fauchet, P. M., Nature 384, 338 (1996).
5. Schmuki, P., Erickson, L. E., Lockwood, D. J., Phys. Rev. Lett. 80, 4060 (1998).
6. Schmuki, P., Erickson, L. E., Lockwood, D. J., Fraser, J. W., Champion, G., Labbé, H. J., Appl. Phys. Lett. 72, 1039 (1998).
7. Xu, J. and Steckl, A. J., Appl. Phys. Lett. 65, 2081 (1994).
8. Duttagupta, S. P., Peng, C., Fauchet, P. M., Kurinec, S. K., Blanton, T. N., J. Vac. Sci. Technol. B 13, 1230 (1995).
9. Doan, V. V. and Sailor, M. J., Science 256, 1791 (1992).
10. Barbour, J. C., Dimos, D., Guilinger, T. R., Kelly, M. J., Tsao, S. S., Appl. Phys. Lett. 59, 2088 (1991).
11. Schmuki, P., Erickson, L. E., Lockwood, D. J., Fraser, J. W., Mason, B. F., Champion, G., Labbé, H. J., J. Electrochem. Soc. 146 (to be published in 1997).
12. Schmuki, P., Lockwood, D. J., Labbé, H. J., Fraser, J. W., Graham, M. J., in Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, edited by Schmuki, P., Lockwood, D. J., Isaacs, H. S., and Bsiesy, A. (Electrochemical Soc., Pennington, NJ, 1997), p. 112.
13. Schmuki, P., Fraser, J., Vitus, C. M., Graham, M. J., Isaacs, H., J. Electrochem. Soc. 143, 3316 (1996).
14. Schmuki, P., Lockwood, D. J., Labbé, H. J., Fraser, J. W., Appl. Phys. Lett. 69, 1620 (1996).
15. Lockwood, D. J., Schmuki, P., LabbW, H. J., Fraser, J. W., in Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, edited by Schmuki, P., Lockwood, D. J., Isaacs, H. S., and Bsiesy, A. (Electrochemical Soc., Pennington, NJ, 1997), p. 447.

Light Emitting Micropatterns of Porous Semiconductors

  • D. J. Lockwood (a1), P. Schmuki (a2) and L. E. Erickson (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed