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Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

Published online by Cambridge University Press:  21 February 2011

D.A.S. Loeber ,
J.M. Redwing ,
N.G. Anderson  and
M.A. Tischler
D.A.S. Loeber
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, MA 01003
J.M. Redwing
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
N.G. Anderson
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, MA 01003
M.A. Tischler
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
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Abstract

Edge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 949
Copyright
Copyright © Materials Research Society 1996

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References

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