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A Lifetime Study of Oxygen Agglomeration Induced Defects in Cz Silicon Crystal by Surface Photovoltage (SPV)

Published online by Cambridge University Press:  03 September 2012

Kamal Mishra ,
W. Huber  and
Jacek Lagowski
Kamal Mishra
Affiliation:
MEMC Electronic Materials, Inc., St. Peters, MO
W. Huber
Affiliation:
MEMC Electronic Materials, Inc., St. Peters, MO
Jacek Lagowski
Affiliation:
Semiconductor Diagnostics, Inc., Tampa, FL
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Abstract

In this study the effect of oxygen agglomeration on minority carrier diffusion length in as-grown p-CZ silicon has been studied in detail. Oxygen-related defects were found acting as minority carrier traps in p-CZ silicon. These defects are not found in either oxygen-free FZ silicon or in n-type CZ silicon samples. The traps have profound effect on low excitation level diffusion length values leading to an apparent lifetime decrease by as much as an order of magnitude. This effect can be eliminated by a steady state “bias light” superimposed on the chopped excitation light. The traps can be annihilated and re-generated by thermal treatments.

Our study has also revealed oxygen-induced recombination centers. Significant improvement in lifetime is realized in p-type CZ silicon after heat treatment between 550°C and 800°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 677
Copyright
Copyright © Materials Research Society 1992

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References

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