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Leds Based on Oxidized Porous Polysilicon on a Transparent Substrate

Published online by Cambridge University Press:  09 August 2011

C. C. Striemer ,
S. Chan ,
H. A. Lopez ,
K. D. Hirschman ,
H. Koyama ,
Q. Zhu ,
L. Tsybeskov ,
P. M. Fauchet ,
N. M. Kalkhoran  and
L. Depaulis
C. C. Striemer
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
S. Chan
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
H. A. Lopez
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
K. D. Hirschman
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
H. Koyama
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
Q. Zhu
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
N. M. Kalkhoran
Affiliation:
Spire Corporation, Bedford, MA 01730
L. Depaulis
Affiliation:
Spire Corporation, Bedford, MA 01730
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Abstract

Light emitting devices (LEDs) based on porous polysilicon (PPS) have been fabricated on a transparent quartz substrate. Several structures have been developed, each consisting of a backside contact (ITO or p+ polysilicon), a light emitting PPS layer, a capping layer, and a metal top contact. Photoluminescence (PL) from PPS is similar to that of etched crystalline Si, peaking near 750 nn and showing degradation during 515 nm laser excitation with intensity <100 mW/cm2. This degradation disappears if PPS is oxidized after formation. Visible electroluminescence (EL) has been achieved in both oxidized and non-oxidized PPS devices with voltages under 10 V and current densities <200 mA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 511
Copyright
Copyright © Materials Research Society 1999

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References

1. Hirschman, K. D., Tsybeskov, L., Duttagupta, S. P., and Fauchet, P. M., Nature, 384, p. 338 (1996).Google Scholar
2. Collins, R. T., Fauchet, P. M., and Tischler, M. A., Physics Today, 50, 24 (1997).Google Scholar
3. Fauchet, P. M., in Light Emission in Silicon from Physics to Devices, edited by Lockwood, D. J. (Semiconductors and Semimetals 49, New York, 1998), p. 206.Google Scholar
4. Koshida, N., Takizawa, E, Mizuno, H., Arai, S., Koyama, H., and Sameshima, T., in Materials and Devices for Silicon-Based Optoelectronics, edited by Polman, A., Coffa, S., and Soref, R. (Mater. Res. Soc. Symp. Proc. 486, Boston, MA, 1998) p. 151.Google Scholar
5. Kalkhoran, N. M., Namavar, F., and Maruska, H. P., Appl. Phys. Lett. 63, p. 2661 (1993).Google Scholar
6. Chane-Che-Lai, F., Beau, C., Briand, D., and Joubert, P., Applied Surface Science, 102, p. 399 (1996).Google Scholar
7. Guyader, P., Joubert, P., Guendouz, M., Beau, C., and Sarret, M., Appl. Phys. Lett. 65, p. 1787 (1994).Google Scholar
8. Han, P. G., Poon, M. C., Ko, P. K., and Sin, J. K. O., J. Vac. Sci. Technol. B, 14, p. 824 (1996).Google Scholar
9. Haji, L., Thomas, Y. Le, Lai, F. Chane Che, and Joubert, P., in Advances in Microcrystalline and Nanocrystalline Semiconductors - (1996), edited by Collins, R. W., Fauchet, P. M., Shimizu, I, Vial, J., Shimada, T., and Alivisatos, A. P., (Mater. Res. Soc. Symp. Proc. 452, Boston, MA, 1997) p. 421.Google Scholar
10. Huang, W. N., Tong, K. Y., and Chan, P. W., Semicond. Sci. Technol. 12, p. 228 (1997).Google Scholar