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Leakage and Transconductance in Polysilicon Thin Film Transistors: Effect of Grain Boundary Hydrogenation

  • Feng Qian (a1), Dae M. Kim (a1) and Galen H. Kawamoto (a2)

Abstract

The n- and p-channel field effect transistors are fabricated in as-deposited and grain boundary passivated polysilicon thin films. The performance of these thin film transistors (TFT's) is characterized and compared. Specifically, the transconductance and leakage behavior are discussed in detail in correlation with the grain boundary properties. The I-V characteristics are modeled from a unified point of view.

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1. Troxell, J. R., Harrington, M. I., Erskine, J. C., Dumbaugh, W. H., Fehlner, F. P., and Miller, R. A., IEEE Electron Device Lett., vol. EDL-7, No. 11, pp. 597599, 1986.
2. Hawkins, W. G., IEEE Trans. Electron Devices, vol. ED-33, pp. 477481, 1986.
3. Morozumi, S., Araki, R., Ohshima, H., Matsuo, M., Nakazawa, T., and Sato, T., Japan Display'86, p. 196, 1986.
4. Qian, F., Kim, D. M., and Kawamoto, G. H., IEEE Trans. Electron Devices. (submitted.)
5. Qian, F., Kim, D. M., Park, H. K., and Sachitano, J. L., IEEE Trans. Electron Devices, vol. ED-34, No. 12, 1987.
6. Depp, S. W., Huth, B. G., Juliana, A., and Koepcke, R. W., pp. 297309, North-Holland, 1982. Eds., H. J. Leamy, G. E. Pike, and C. H. Seager
7. Ohshima, T., Noguchi, T., and Hayashi, H., Jpn. Appl. Phys. Lett., vol.25, No. 4, pp. L291–L293, 1986.

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