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Leakage and Transconductance in Polysilicon Thin Film Transistors: Effect of Grain Boundary Hydrogenation

Published online by Cambridge University Press:  22 February 2011

Feng Qian ,
Dae M. Kim  and
Galen H. Kawamoto
Feng Qian
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
Dae M. Kim
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
Galen H. Kawamoto
Affiliation:
Intel Corporation, 5200 N.E. Elam Young Parkway, Hillsboro, OR 97124
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Abstract

The n- and p-channel field effect transistors are fabricated in as-deposited and grain boundary passivated polysilicon thin films. The performance of these thin film transistors (TFT's) is characterized and compared. Specifically, the transconductance and leakage behavior are discussed in detail in correlation with the grain boundary properties. The I-V characteristics are modeled from a unified point of view.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 311
Copyright
Copyright © Materials Research Society 1988

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References

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