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Lead Titanate Thin Films Prepared by Metallorganic Chemical Vapor Deposion (MOCVD) on Sapphire, Pt, and RuOx Substrates

Published online by Cambridge University Press:  15 February 2011

Warren C. Hendricks
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute & State University, Blacksburg, VA
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute & State University, Blacksburg, VA
Chien H. Peng
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute & State University, Blacksburg, VA
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Abstract

Transparent and highly specular PbTiO3 thin films were deposited on sapphire, platinum and ruthenium oxide-coated silicon wafers by hot-wall metallorganic chemical vapor deposition (MOCVD). Lead bis-tetramethylheptadionate and titanium ethoxide were used as chemical precursors. Films were deposited over a range of experimental conditions. X-ray diffraction (XRD) was used to determine the phases present in the films; Scanning Electron Microscopy (SEM) was used to examine the surface morphology and Energy Dispersive Spectroscopy (EDS) was used to determine the composition. Optical spectra were obtained to confirm the highly dense and transparent nature of the films. The chemical stability of the ruthenium oxide substrates in the MOCVD environment as well as the existence of a high-temperature deposition regime for composition control are also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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