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Layout Pattern Density and Oxide Deposition Profile Effects on Dielectrics CMP

Published online by Cambridge University Press:  18 March 2011

Young B. Park ,
Joon Y. Kim  and
Dae W. Seo
Young B. Park
Affiliation:
System IC R & D Center, Hyundai Electronics Co., Ltd., Cheongju, 360-480, Korea
Joon Y. Kim
Affiliation:
System IC R & D Center, Hyundai Electronics Co., Ltd., Cheongju, 360-480, Korea
Dae W. Seo
Affiliation:
System IC R & D Center, Hyundai Electronics Co., Ltd., Cheongju, 360-480, Korea
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Abstract

Test mask for characterizing pattern dependent variation of the remaining thickness after chemical-mechanical polishing (CMP) was designed with taking the experimentally obtained interaction distance into consideration. Measured interaction distance was constant independent of pattern variables such as pattern density and pattern shapes between line and area. And systematic exploration regarding pitch effects on remaining nitride thickness in STI (Shallow Trench Isolation) CMP was performed with comparing PETEOS (Plasma Enhanced Tetra Ethyl Ortho Silicate) and HDP (High Density Plasma) oxide. Both measured remaining nitride thickness and expected oxide pattern density from consideration of deposition profile effects showed a good correlation with respect to pitch variation for a constant layout pattern density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M5.4
Copyright
Copyright © Materials Research Society 2001

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References

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