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Lattice-Matched Gaas/Ca0.45Sr0.55F2/Ge(100) Heterostrucuures Grown By Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

C. W. Tu ,
J. C. Beggy ,
F. A. Baiocchi ,
S. M. Abys ,
S. J. Pearton ,
S. J. Hsieh ,
R. F. Kopf ,
R. Caruso  and
A. S. Jordan
C. W. Tu
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. C. Beggy
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520
F. A. Baiocchi
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. M. Abys
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. J. Hsieh
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. F. Kopf
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. Caruso
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
A. S. Jordan
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Epitaxial, lattice-matched GaAs/Ca0.45Sr0.55/F2 heterostructures were grown on Ge(100) substrates by molecular beam epitaxy. The films were analyzed by Rutherford backscattering and secondary ion mass spectroscopy to determine crystallinity and Ge outdiffusion. The Xmin (channeling over random yield) of a 1.5 μm-thick GaAs film grown on the fluoride is 0.075, indicating reasonably good epitaxy. After rapid thermal annealing, the crystallinity of higher-Xmin films improves, and Ge diffuses only 200 A into the fluoride, indicating that a thin fluoride layer is an effective barrier to Ge outdiffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 359
Copyright
Copyright © Materials Research Society 1987

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References

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