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  • T. Maekawa (a1), T. Saito (a1), M. Yoshikawa (a1) and H. Takigawa (a1)


An etch pit study has been made on misfit dislocations in (111) HgCdTe-CdZnTe heterojunctions grown by liquid phase epitaxy. It was shown that misfit dislocations were localized at the original surface of the substrate, because Zn diffused into the epilayer during epitaxial growth prevents movement of dislocations. For lattice matching between Hg0 7Cd0.3Te and Cd1−yZnyTe, the optimum ZnTe mole fraction of Cd1−yZnyTe was found to be 2.9%.



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[1] Takigawa, H., Yoshikawa, M., M.Ito and Maruyama, K., Mat. Res. Symp. Proc. 37, 97 (1984).
[2] Basson, J.H. and Booyens, H., Phys. Stat. Sol. (A)80, 663 (1983)
[3] Woolhouse, G.R., T.J.Magee, Kawayoshi, H.A., C.S.H. Leung and Ormond, R.D., J. Vac. Sci. Technol. A3(1), 83 (1985).
[4] Tranchart, J.C., Latorre, B., Foucher, C. and Y. Le Gouge, J. Crystal Growth 72, 468 (1985).
[5] Sher, A., Chen, A., Spicer, W.E. and Shin, C., J. Vac. Sci. Technol. A3(l), 105 (1985).


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