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Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

  • H. Yamamoto (a1), H. Ishiwara (a1), S. Furukawa (a1), M. Tamura (a2) and T. Tokuyama (a2)...

Abstract

Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

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Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

  • H. Yamamoto (a1), H. Ishiwara (a1), S. Furukawa (a1), M. Tamura (a2) and T. Tokuyama (a2)...

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