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Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

  • H. Kuriyama (a1) (a2), K. Sano (a1), S. Ishida (a1), T. Nohda (a1), Y. Aya (a1), T. Kuwahara (a1), S. Noguchi (a1), S. Kiyama (a1) (a2), S. Tsuda (a1) and S. Nakano (a1)...

Abstract

We have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

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[2] Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Kawata, H., Osumi, M., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. Appl. Phys. 30, 3700 (1991).
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Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

  • H. Kuriyama (a1) (a2), K. Sano (a1), S. Ishida (a1), T. Nohda (a1), Y. Aya (a1), T. Kuwahara (a1), S. Noguchi (a1), S. Kiyama (a1) (a2), S. Tsuda (a1) and S. Nakano (a1)...

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