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Lateral Extension of Dislocations in Nmos Ic.

Published online by Cambridge University Press:  28 February 2011

W. F. Tseng ,
B. R. Wilkins  and
D. Mccarthy
W. F. Tseng
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
B. R. Wilkins
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
D. Mccarthy
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

Dislocations extending through channel regions of NMOSFETs with submicron gate lengths have been observed. Additionally, arrays of dislocations in the field regions of IC's have also been observed and found to be generating from the corners of the first n+ region during subsequent high temperature process.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 69
Copyright
Copyright © Materials Research Society 1986

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References

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