Skip to main content Accessibility help
×
Home

Lateral Extension of Dislocations in Nmos Ic.

  • W. F. Tseng (a1), B. R. Wilkins (a1) and D. Mccarthy (a1)

Abstract

Dislocations extending through channel regions of NMOSFETs with submicron gate lengths have been observed. Additionally, arrays of dislocations in the field regions of IC's have also been observed and found to be generating from the corners of the first n+ region during subsequent high temperature process.

Copyright

References

Hide All
[1] Tseng, W.F., Hevey, R.H., Corazzi, R.J., Christou, A. and Davis, G.E., J. Electronic Mat., 15, 1 (1986).
[2] Pearce, C.W. and Yaney, D.S., IEEE Electron Device Lett., EDL–6, 326 (1985).
[3] Koji, T., Tseng, W.F., Mayer, J.W., and Suganuma, T., Solid State Electronics, 22, 335 (1979).
[4] Ogura, S., Tsang, P.J., Walker, W.W., Critchlow, D.L. and Shepard, J.F., IEEE Trans. Electron Devices, Ed–27, 1359 (1980).
[5] Ogura, S., Codella, C.F., Rovedo, N., Shepard, J.F. and Riseman, J., IEDM Tech. Dig., 718 (1982).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed