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Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 March 2011

Shulin Gu ,
Rong Zhang ,
Ling Zhang  and
T. F. Kuech
Shulin Gu
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
Rong Zhang
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
Ling Zhang
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

The initial stage of hydride vapor phase epitaxy GaN growth on ZnO-buffered sapphire is reported. A high supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent step with high lateral growth rate was chosen to promote coalescence of the initial islands and provide optimal material properties. The specific mole fractions of the GaCl and NH3 control these vertical and lateral growth rates. The use of a two- step growth process in the GaN growth has led to improved and controlled morphology and high quality GaN materials have then been grown on sapphire substrate with and without ZnO buffer layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.9.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Nakamura, S., Jpn. J. Appl. Phys., 30, L1705(1991).Google Scholar
2. Akasaki, I., and Amano, H., J. Crystal Growth, 163, 86(1996).Google Scholar
3. Munkholm, A., Thompson, C., Foster, C. M., Eastman, J. A., Auciello, O., and Stephenson, G. B., Fini, P., DenBaars, S. P. and Speck, J. S., Appl. Phys. Lett., 72, 2972(1998).Google Scholar
4. Ito, T., Sumiya, M., Takano, Y., Ohtsuka, K., and Fuke, S., Jap. J. Appl. Phys., 38, 649 (1999).Google Scholar
5. Sugiera, L., Itaya, K., Nishio, J., Fujimoto, H., and Kokubun, Y., J. Appl. Phys., 82, 4877 (1999).Google Scholar
6. Hersee, S.D., Ramer, J., Zeng, K., Kranenberg, C., Malloy, K., Banas, M., and Goorsky, M., J. Electronic Materials (1995) 1519.Google Scholar
7. Ishida, M., Hashimoto, T., Takayama, T., Imafuji, O., Yuri, M., Yoshikawa, A., Itoh, K., Terakoshi, Y., Sugino, T., Shirafuji, J., Gallium Nitride and Related Materials II. Symposium Mater. Res. Soc (1997) 69.Google Scholar
8. Byun, D., Jeong, J., Lee, J. I., Kim, B., Yoo, J. B., Kum, D. W., III-V Nitrides. Symposium Mater. Res. Soc. (1997) 59.Google Scholar
9. Keller, S., Kapolnek, D., Keller, B., Wu, Y., Heying, B., Denbarrs, S.P., J. Appl. Phys. 35 285 (1996).Google Scholar
10. Uchida, K., Nishida, K., Kondo, M., Munekata, H., J. Crystal Growth 189–190, 270(1998).Google Scholar
11. Hiramatus, K., Itoh, S., Amano, H., Akasaki, O., Kuwano, N., Shiraishi, T., and Ohi, K., J. Crystal. Growth 115, 628(1991).Google Scholar
12. Molnar, R. J., Gotz, W., Romano, L. T., and Johnson, J. M., J. Crystal Growth, 178, 147 (1997).Google Scholar
13. Detchprohm, T., Hiramatsu, K., Amano, H., and Akasaki, I., Appl. Phys. Lett., 61, 2688 (1992).Google Scholar
14. Molnar, R. J., Maki, P., Aggarwal, R., Laiu, Z.L., Brown, E.R., Melngailis, I., Gätz, W., Romano, L.T., and Johnson, N.M., Mater. Res. Soc. Symp. Proc., 423, 221 (1996).Google Scholar
15. Ueda, T., Huang, T. F., Spruytte, S., Lee, H., Yuri, M., Itoh, K., Baba, T., and Harris, J. S. Jr, J. Crystal Growth, 187, 340 (1998).Google Scholar
16. Gu, Shulin, Zhang, Rong, , JingxiSun, Zhang, Ling, and Kuech, T. F., unpublished.Google Scholar
17. Golan, Y., Wu, X. H., Speck, J. S., Vando, R. P., and Phanse, V. M., Appl. Phys. Lett., 73(21), 3090(1998).Google Scholar
18. Zywietz, T., Negebauer, J., and Scheffler, M., Appl. Phys. Lett., 73(4), 487(1998).Google Scholar
19. Mattila, T., and Nieminen, R. M., Phys. Rev. B, 55(15), 9571(1997).Google Scholar