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Laser-Induced Voltages at Room Temperature in YBa2Cu3O7 and PrxY1-xBa2Cu3O7 Thin Films

Published online by Cambridge University Press:  15 February 2011

H.- U. Habermeier
Affiliation:
Max-Planck-Institut FKF, Heisenbergstr. 1, D 70569 Stuttgart Germany
N. Jisrawi
Affiliation:
Max-Planck-Institut FKF, Heisenbergstr. 1, D 70569 Stuttgart Germany
G. Jäger-Waldau
Affiliation:
Max-Planck-Institut FKF, Heisenbergstr. 1, D 70569 Stuttgart Germany
U. Sticher
Affiliation:
Max-Planck-Institut FKF, Heisenbergstr. 1, D 70569 Stuttgart Germany
B. Leibold
Affiliation:
Max-Planck-Institut FKF, Heisenbergstr. 1, D 70569 Stuttgart Germany
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Abstract

Recent reports on high transient transverse voltages at room temperature in YBa2Cu3O7 and PrxYl-xBa2Cu3O7 thin films grown on SrTiO3 single crystal substrates, with a tilt angle between the [ 001 ] cubic axis and the substrate surface plane, have been interpreted by thermoelectric fields transverse to a laser-induced temperature gradient which are caused by the non-zero off diagonal elements of the Seebeck tensor. We have studied this effect in epitaxially grown Pr- doped, as well as undoped YBa2Cu3O7, thin films and observed for a 2 mm long YBa2Cu3O7 strip exposed to a UV photon fluence of 100 mJ/cm2 signals as large as 30 V. The unexpected high values for the signals and their doping dependence are discussed within the frame of a model based on a thermopile arrangement, the growth induced defect structure and the doping induced modifications of the material properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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